IGBT platform increases solar inverter efficiency 2014

Description:

Vishay Intertechnology has introduced the Trench-IGBT platform featuring Punch Through (PT) and Field Stop (FS) technologies. Designed to increase efficiency in motor drives, UPS, solar inverters, and welding machine inverters, the devices, offer low collector-to-emitter voltages, as well as fast and soft turn-on and -off for low conduction and switching losses.

Available in various bare die sizes with collector current ratings from 30 to 240A and breakdown voltages of 600 and 650V, the IGBT chips include Trench PT and FS devices, each available as sawn or unsawn die.

Offering extremely low conduction losses, the Trench PT devices feature a negative temperature coefficient for low collector-to-emitter voltages down to 1.07V at 50% rated current and 1.34V at full rated current and +125°C. With a Trench construction, the IGBTs offer a smaller size than planar devices, providing higher current density and lower thermal resistance without compromising performance and reliability. Providing breakdown voltages of up to 650V for increased reliability, the Trench PT IGBTs are optimised for low switching frequencies to 1kHz...